The Wavelength-Locking of High-Power 808 nm Semiconductor Laser

A distributed feedback (DFB) laser of 808 nm is produced in this paper whose optical power is 2 W, cavity length is 3 mm, and injecting width is 200 μm. A second-order grating formed into an InGaP/GaAs/InGaP multilayer structure provides the optical distributed feedback. The holographic lithography...

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Veröffentlicht in:	Mathematical problems in engineering 2015-01, Vol.2015 (2015), p.1-4
Hauptverfasser:	Qu, Yi, Tang, Hai-Bin, Gao, Feng, Li, Hui, Li, Zai-Jin, Guo, Hai-Xia, Shi, Bao-Hua
Format:	Artikel
Sprache:	eng
Schlagworte:	Bragg gratings Colleges & universities Diffraction gratings Distributed feedback lasers Feedback Gallium arsenide Gallium arsenides Gallium indium phosphide Gratings (spectra) Heat Holography Lasers Light Lithography Multilayers Organic chemicals Semiconductor lasers Three dimensional Three dimensional analysis Waveguides Wavelengths
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