Sub 60 mV/decade Switch Using an InAs Nanowire–Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique
We report changes of turn-on voltage in InAs-Si heterojunction steep subthreshold-slope transistors by the Zn-pulsed doping technique for InAs nanowire channels. The doping of the nanowire channel moderately changes turn-on voltage from negative to positive voltage, while keeping a steep subthreshol...
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| Veröffentlicht in: | Nano letters 2013-12, Vol.13 (12), p.5822-5826 |
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| container_end_page | 5826 |
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| container_issue | 12 |
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| container_title | Nano letters |
| container_volume | 13 |
| creator | Tomioka, Katsuhiro Yoshimura, Masatoshi Fukui, Takashi |
| description | We report changes of turn-on voltage in InAs-Si heterojunction steep subthreshold-slope transistors by the Zn-pulsed doping technique for InAs nanowire channels. The doping of the nanowire channel moderately changes turn-on voltage from negative to positive voltage, while keeping a steep subthreshold-slope of 30 mV/decade under reverse bias direction. The formation of pseudointrinsic InAs segment is found to be important to make a normally off transistor with a steep subthreshold slope. |
| doi_str_mv | 10.1021/nl402447h |
| format | Article |
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The doping of the nanowire channel moderately changes turn-on voltage from negative to positive voltage, while keeping a steep subthreshold-slope of 30 mV/decade under reverse bias direction. 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The doping of the nanowire channel moderately changes turn-on voltage from negative to positive voltage, while keeping a steep subthreshold-slope of 30 mV/decade under reverse bias direction. The formation of pseudointrinsic InAs segment is found to be important to make a normally off transistor with a steep subthreshold slope.</description><subject>Applied sciences</subject><subject>Arsenicals - chemistry</subject><subject>Channels</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Doping</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Heterojunctions</subject><subject>Indium - chemistry</subject><subject>Indium arsenides</subject><subject>Materials science</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanotechnology</subject><subject>Nanowires</subject><subject>Nanowires - chemistry</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. 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| identifier | ISSN: 1530-6984 |
| ispartof | Nano letters, 2013-12, Vol.13 (12), p.5822-5826 |
| issn | 1530-6984 1530-6992 |
| language | eng |
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| source | MEDLINE; ACS Publications |
| subjects | Applied sciences Arsenicals - chemistry Channels Cross-disciplinary physics: materials science rheology Doping Electric potential Electronics Exact sciences and technology Heterojunctions Indium - chemistry Indium arsenides Materials science Molecular electronics, nanoelectronics Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanotechnology Nanowires Nanowires - chemistry Physics Quantum wires Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon - chemistry Surface Properties Voltage Zinc |
| title | Sub 60 mV/decade Switch Using an InAs Nanowire–Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique |
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