Sub 60 mV/decade Switch Using an InAs Nanowire–Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique

We report changes of turn-on voltage in InAs-Si heterojunction steep subthreshold-slope transistors by the Zn-pulsed doping technique for InAs nanowire channels. The doping of the nanowire channel moderately changes turn-on voltage from negative to positive voltage, while keeping a steep subthreshold-slope of 30 mV/decade under reverse bias direction. The formation of pseudointrinsic InAs segment is found to be important to make a normally off transistor with a steep subthreshold slope.