Experimental Evidence for Dark Excitons in Monolayer WSe_{2}

Transition metal dichalcogenides in the class MX_{2} (M=Mo, W; X=S, Se) have been identified as direct-gap semiconductors in the monolayer limit. Here, we examine light emission of monolayer WSe_{2} using temperature-dependent photoluminescence and time-resolved photoluminescence spectroscopy. We pr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review letters 2015-12, Vol.115 (25), p.257403-257403
Hauptverfasser: Zhang, Xiao-Xiao, You, Yumeng, Zhao, Shu Yang Frank, Heinz, Tony F
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Transition metal dichalcogenides in the class MX_{2} (M=Mo, W; X=S, Se) have been identified as direct-gap semiconductors in the monolayer limit. Here, we examine light emission of monolayer WSe_{2} using temperature-dependent photoluminescence and time-resolved photoluminescence spectroscopy. We present experimental evidence for the existence of an optically forbidden dark state of the band-gap exciton that lies tens of meV below the optically bright state. The presence of the dark state is manifest in the strong quenching of light emission observed at reduced temperatures. The experimental findings are consistent with theoretical predictions of spin-polarized conduction and valence bands at the K point of the Brillouin zone, with the minimum gap occurring between bands of opposite electron spin.
ISSN:1079-7114
DOI:10.1103/PhysRevLett.115.257403