Varying Surface Chemistries for p‑Doped and n‑Doped Silicon Nanocrystals and Impact on Photovoltaic Devices

Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure...

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Veröffentlicht in:ACS applied materials & interfaces 2015-12, Vol.7 (51), p.28207-28214
Hauptverfasser: Velusamy, Tamilselvan, Mitra, Somak, Macias-Montero, Manuel, Svrcek, Vladimir, Mariotti, Davide
Format: Artikel
Sprache:eng
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Zusammenfassung:Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.5b06577