Evaluation of epitaxial silicon diodes as dosimeters in X-ray mammography

In this work we report on results obtained with 2 rad-hard n-type epitaxial silicon diodes in mammography X-ray dosimetry. One sample was not irradiated before using as a dosimeter, while the other received a 60Co gamma-ray pre-dose of 200 kGy. Both unbiased devices operated in a short-circuit mode as on-line radiation dosimeters for quality assurance in medical imaging dosimetry. The irradiation was performed using 28 kV and 35 kV X-ray beams from a Pantak/Seifert generator, previously calibrated by standardized ionization chamber. The dosimetric response of these devices was investigated with respect to the repeatability, long term stability, sensitivity dependence on energy and dose-rate, charge-dose linearity and directional response. The calibration coefficients of each diode, in terms of air kerma, were also determined. These dosimetric parameters of both diodes fully meet the requirements of IEC 61674 norm, confirming their use as a reliable alternative choice for mammography photon dosimetry within the dose range of 60 μGy-10 Gy (unirradiated EPI diode); for the pre-irradiated EPI diode upper limit of dose was not reached up to now. Nevertheless, it still remains to be investigated whether or not the pre-irradiation procedure influences on the response long-term stability of EPI devices. These studies are under way. •Mammography X-ray dosimetry using epitaxial silicon diodes.•Charge-dose response linear and independent on energy and dose rate.•Good sensitivity for low-energy X-rays until accumulated dose of 200 kGy.•Dosimetric parameters of diodes meet the requirements of IEC 61674 norm.