A 30-dB 1-16-GHz low noise IF amplifier in 90-nm CMOS

This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain.Incorporating an input inductor and a gate-inductive gain-peaking inductor,the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure.The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB.Under 1.2 V supply voltage,the proposed IF amplifier consumes 42 mW DC power.The chip die including pads takes up 0.53 mm~2,while the active area is only 0.022 mm~2.