Chemical synthesis of high quality epitaxial vanadium dioxide films with sharp electrical and optical switch properties

Chemical synthesis of high quality epitaxial vanadium dioxide films with sharp electrical and optical switch properties

The effective preparation method of epitaxial VO 2 films on the r-Al 2 O 3 substrates based on the MOCVD technique and post-deposition annealing is described. The composition, orientation and morphology of the films obtained were investigated by Raman spectroscopy, XRD, EBSD, XPS, SEM and AFM method...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-01, Vol.3 (35), p.9197-9205
Hauptverfasser: Makarevich, A. M., Sadykov, I. I., Sharovarov, D. I., Amelichev, V. A., Adamenkov, A. A., Tsymbarenko, D. M., Plokhih, A. V., Esaulkov, M. N., Solyankin, P. M., Kaul, A. R.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Epitaxy
Insulators
Mathematical models
Recrystallization
Synthesis (chemistry)
Vanadium oxides
X-ray photoelectron spectroscopy
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Zusammenfassung:The effective preparation method of epitaxial VO 2 films on the r-Al 2 O 3 substrates based on the MOCVD technique and post-deposition annealing is described. The composition, orientation and morphology of the films obtained were investigated by Raman spectroscopy, XRD, EBSD, XPS, SEM and AFM methods. The samples obtained demonstrate high crystal quality and excellent physical properties: sharp metal-insulator (>10 4 resistance change) and intensive optical reflectivity (IR and THz regions) transitions. The model of VO 2 film recrystallization based on the peritectic decomposition of intergrain vanadium oxide phases is proposed.
ISSN:2050-7526
2050-7534
DOI:10.1039/C5TC01811K