Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

This paper presents a brief overview of available experimental data on the characteristics of stimulated terahertz emission from optically excited neutral group V donors (phosphorus, antimony, arsenic and bismuth) in crystalline silicon subjected to uniaxial compressive strain along the [100] axis....

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2015-01, Vol.45 (2), p.113-120
Hauptverfasser: Kovalevsky, K.A., Abrosimov, N.V., Zhukavin, R.Kh, Pavlov, S.G., Hübers, H.-W., Tsyplenkov, V.V., Shastin, V.N.
Format: Artikel
Sprache:eng
Schlagworte:
ANTIMONY
ARSENIC
BISMUTH
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Compressive properties
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Constraining
DOPED MATERIALS
Estimates
EXPERIMENTAL DATA
LASER RADIATION
Lasers
PHOSPHORUS
PUMPING
SILICON
silicon laser
STIMULATED EMISSION
Strain
STRAINS
terahertz radiation
THZ RANGE
uniaxial deformation
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Beschreibung
Zusammenfassung:This paper presents a brief overview of available experimental data on the characteristics of stimulated terahertz emission from optically excited neutral group V donors (phosphorus, antimony, arsenic and bismuth) in crystalline silicon subjected to uniaxial compressive strain along the [100] axis. Strain is shown to have a significant effect on the characteristics in question. Optimal strain depends on the dopant and may reduce the threshold pump intensity and improve lasing efficiency. We discuss possible mechanisms behind this effect and estimate the limiting output emission parameters.
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2015v045n02ABEH015532