Low-Temperature Processable High-Performance Electrochemically Deposited p-Type Cuprous Oxides Achieved by Incorporating a Small Amount of Antimony

The development of an electrochemically robust method for the low‐temperature deposition of cuprous oxide (Cu2O) thin films with reliable and conductive p‐type characteristics could yield breakthroughs in earth abundant and ecofriendly all oxide‐based photoelectronic devices. The incorporation of th...

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Veröffentlicht in:	Advanced functional materials 2015-08, Vol.25 (32), p.5214-5221
Hauptverfasser:	Baek, Seung Ki, Kwon, Yong Hun, Shin, Jae Hui, Lee, Ho Seong, Cho, Hyung Koun
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony COPPER OXIDE Crystallinity CUPROUS OXIDE DEPOSITION Devices Diffraction patterns ELECTRODEPOSITION ELECTRONIC PRODUCTS MICA NUCLEATION OXIDES Resistivity THIN FILMS
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