A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology

This paper presents a millimeter wave (mm-wave) oscillator that generates signal at 36.56 GHz. The ram-wave oscillator is realized in a UMC 0.18 μm CMOS process. The linear superposition (LS) technique breaks through the limit of cut-off frequency (JET), and realizes a much higher oscillation than J...

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Veröffentlicht in:Journal of semiconductors 2014, Vol.35 (1), p.112-116
1. Verfasser: 闫冬 毛陆虹 苏秋杰、 谢生 张世林
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Sprache:eng
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Zusammenfassung:This paper presents a millimeter wave (mm-wave) oscillator that generates signal at 36.56 GHz. The ram-wave oscillator is realized in a UMC 0.18 μm CMOS process. The linear superposition (LS) technique breaks through the limit of cut-off frequency (JET), and realizes a much higher oscillation than Jr. Measurement results show that the LS oscillator produces a calibrated 37.17 dBm output power when biased at 1.8 V; the output power of fundamental signal is -10.85 dBm after calibration. The measured phase noise at 1 MHz frequency offset is -112.54 dBc/Hz at the frequency of 9.14 GHz. This circuit can be properly applied to mm-wave communication systems with advantages of low cost and high integration density.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/1/015006