A millimeter wave linear superposition oscillator in 0.18 μm CMOS technology
This paper presents a millimeter wave (mm-wave) oscillator that generates signal at 36.56 GHz. The ram-wave oscillator is realized in a UMC 0.18 μm CMOS process. The linear superposition (LS) technique breaks through the limit of cut-off frequency (JET), and realizes a much higher oscillation than J...
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Veröffentlicht in: | Journal of semiconductors 2014, Vol.35 (1), p.112-116 |
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Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | This paper presents a millimeter wave (mm-wave) oscillator that generates signal at 36.56 GHz. The ram-wave oscillator is realized in a UMC 0.18 μm CMOS process. The linear superposition (LS) technique breaks through the limit of cut-off frequency (JET), and realizes a much higher oscillation than Jr. Measurement results show that the LS oscillator produces a calibrated 37.17 dBm output power when biased at 1.8 V; the output power of fundamental signal is -10.85 dBm after calibration. The measured phase noise at 1 MHz frequency offset is -112.54 dBc/Hz at the frequency of 9.14 GHz. This circuit can be properly applied to mm-wave communication systems with advantages of low cost and high integration density. |
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ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/35/1/015006 |