The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model

The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model

A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors （RC-IGBT）. Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect （including primary snap-back effect, secondary...

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Veröffentlicht in:Journal of semiconductors 2014-02, Vol.35 (2), p.62-66
1. Verfasser: 张文亮 朱阳军 卢烁今 田晓丽
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
Conduction
Derivation
Equivalent circuits
Hysteresis
Insulated gate bipolar transistors
Mathematical models
Semiconductors
单元
器件结构
数学推导
电路仿真
电阻特性
等效电路模型
绝缘栅双极晶体管
负微分
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Beschreibung
Zusammenfassung:A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors （RC-IGBT）. Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect （including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect） and hysteresis effect perfectly.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/2/024008