Bandgap-controlled non-equilibrium ZnO1−xSx thin films grown by pulsed laser deposition method

Bandgap-controlled non-equilibrium ZnO1−xSx thin films grown by pulsed laser deposition method

Although ZnO and ZnS are chemically and structurally similar, these binary compounds do not form a solid solution at room temperature for all proportions of sulfur (S) and oxygen (O) due to solubility limits of S in ZnO and O in ZnS in equilibrium states. To fabricate ZnO1−xSx thin films with 0

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Veröffentlicht in:Thin solid films 2015-08, Vol.589, p.669-672
Hauptverfasser: Choi, H.I., Kim, S.W., Lee, M.H., Kim, D.J., Han, S.-J., Lee, W., Song, T.K., Kim, M.-H., Jeong, I.-K., Kim, W.J.
Format: Artikel
Sprache:eng
Schlagworte:
Alloy
Deposition
Diffraction
Energy gaps (solid state)
Pulsed laser deposition
Semiconductor
Solid solutions
Thin films
Zinc oxide
Zinc sulfides
ZnO
ZnS
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Beschreibung
Zusammenfassung:Although ZnO and ZnS are chemically and structurally similar, these binary compounds do not form a solid solution at room temperature for all proportions of sulfur (S) and oxygen (O) due to solubility limits of S in ZnO and O in ZnS in equilibrium states. To fabricate ZnO1−xSx thin films with 0
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2015.06.046