Structural Characterization of Laser Bonded Sapphire Wafers Using a Titanium Absorber Thin Film

Structural Characterization of Laser Bonded Sapphire Wafers Using a Titanium Absorber Thin Film

Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated...

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Veröffentlicht in:Journal of materials science & technology 2015-05, Vol.31 (5), p.484-488
1. Verfasser: A.de Pablos-Martín S.Tismer Th.Hche
Format: Artikel
Sprache:eng
Schlagworte:
Absorbing film
Aluminum
bondin
Bonding
film
Sapphire
Irradiation
Laser
Laser welding
Lasers
Sapphire
Sapphire wafer bonding
Scanning acoustic microscopy
Thin films
Titanium
wafer
welding
Absorbing
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Beschreibung
Zusammenfassung:Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated region becomes transparent,the bond quality was evaluated by scanning acoustic microscopy.
ISSN:1005-0302
1941-1162
DOI:10.1016/j.jmst.2014.12.007