High-modulation efficiency operation of GaInAsP/InP membrane distributed feedback laser on Si substrate

The direct modulation characteristics of a membrane distributed feedback (DFB) laser on a silicon substrate were investigated. Enhancement of the optical confinement factor in the membrane structure facilitates the fabrication of a strongly index-coupled (κ(I) = 1500 cm(-1)) DFB laser with the cavit...

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Veröffentlicht in:Optics express 2015-11, Vol.23 (22), p.29024-29031
Hauptverfasser: Inoue, Daisuke, Hiratani, Takuo, Fukuda, Kai, Tomiyasu, Takahiro, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa
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Sprache:eng
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Zusammenfassung:The direct modulation characteristics of a membrane distributed feedback (DFB) laser on a silicon substrate were investigated. Enhancement of the optical confinement factor in the membrane structure facilitates the fabrication of a strongly index-coupled (κ(I) = 1500 cm(-1)) DFB laser with the cavity length of 80 µm and a threshold current of 270 µA. Small-signal modulation measurements yielded a -3dB bandwidth of 9.5 GHz at 1.03-mA bias current, with modulation efficiency of 9.9 GHz/mA(1/2), which is, to the best of our knowledge, the highest value among those reported for DFB lasers.
ISSN:1094-4087
1094-4087
DOI:10.1364/oe.23.029024