Direct formation of large-scale multi-layered germanene on Si substrate

Direct formation of large-scale multi-layered germanene on Si substrate

Germanene layers with lonsdaleite structure has been synthesized from a SiGe thin film for the first time using a N2 plasma-assisted process in this investigation. Multi-layered germanene can be directly observed, and the derived lattice parameters are nearly consistent with the theoretical results....

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2015-09, Vol.17 (33), p.21389-21393
Hauptverfasser: Tsai, Hsu-Sheng, Chen, Yu-Ze, Medina, Henry, Su, Teng-Yu, Chou, Ta-Shun, Chen, Yi-Hsuan, Chueh, Yu-Lun, Liang, Jenq-Horng
Format: Artikel
Sprache:eng
Schlagworte:
Formations
Lattice parameters
Physical chemistry
Silicon germanides
Silicon substrates
Thin films
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Beschreibung
Zusammenfassung:Germanene layers with lonsdaleite structure has been synthesized from a SiGe thin film for the first time using a N2 plasma-assisted process in this investigation. Multi-layered germanene can be directly observed, and the derived lattice parameters are nearly consistent with the theoretical results. Furthermore, large-scale multi-layered germanene has also been demonstrated for applications.
ISSN:1463-9076
1463-9084
DOI:10.1039/c5cp02469b