A Novel Vector Hydrophone Based on the Piezoresistive Effect of Resonant Tunneling Diode

This letter reports a novel vector hydrophone based on the piezoresistive effect of resonant tunneling diode (RTD). An external pressure introduces stress in the layers of RTD and induces its current-voltage (I-V) curves change. This effect has been applied to designing new sensor. By control-hole t...

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Veröffentlicht in:	IEEE sensors journal 2008-04, Vol.8 (4), p.401-402
Hauptverfasser:	Xue, Chenyang, Tong, Zhaomin, Zhang, Binzhen, Zhang, Wendong
Format:	Artikel
Sprache:	eng
Schlagworte:	Acoustic sensors Diodes Electrical resistance measurement Gallium arsenide Hydrophone Hydrophones Mathematical analysis negative differential resistance (NDR) Noise levels Packaging Piezoresistance piezoresistive Resonant tunneling Resonant tunneling devices resonant tunneling diode (RTD) Sensors Sonar equipment Strain control Stress Vectors (mathematics)
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Zusammenfassung:	This letter reports a novel vector hydrophone based on the piezoresistive effect of resonant tunneling diode (RTD). An external pressure introduces stress in the layers of RTD and induces its current-voltage (I-V) curves change. This effect has been applied to designing new sensor. By control-hole technology, the sensor is processed integrated with GaAs/In x Ga 1-x As/AlAs double barrier structures posited on its strain-sensitive region. The fabricated sensor is packaged for watertight solution, and underwater measurements are conducted in RTD's negative differential resistance (NDR) region. Directivity curve of the sensor follows ";8"; cosine functional form, which shows its vector sound signal detection ability, and its sensitivity reaches -184.6 dB (0 dB = 1 V/muPa) at 1 KHz.
ISSN:	1530-437X 1558-1748
DOI:	10.1109/JSEN.2008.917123