Electrical characterization of In-N codoped p-type ZnO films grown by chemical methods

Preliminary results of the studies of electrical properties of ZnO films, codoped with donor and acceptor pair In-N are reported. The films were grown on Si substrates by chemical route procedures involving a sol-gel followed by hydrothermal treatment at 500°C. For electrical characterization, current-voltage and capacitance-voltage measurements were conducted on MIS structures with embedded ZnO(In,N) films. The estimated doping concentration in the studied films is higher than 1×1016 cm−3 corresponding to a semiconductor with good conductivity. However, the obtained large values of the differential specific resistivity (ρ 3.2×105 Ωcm) suggest that the nitrogen acceptors in these films are compensated by some kind of donor-type defects.