Atomic Layer Deposition of Zirconium Oxide on Carbon Nanoparticles

In this report we describe preparation of structures containing carbon nanoparticles for potential applications in nonvolatile memories. The carbon nanoparticles were synthesized from 5-methylresorcinol and formaldehyde via base catalysed polycondensation reaction, and were distributed over substrates by dip-coating the substrates into an organic solution. Before deposition of nanoparticles the substrates were covered with 2 nm thick Al2O3 layer grown by atomic layer deposition (ALD) from Al(CH3)3 and O3. After deposition of nanoparticles the samples were coated with ZrO2 films grown from C5H5Zr[N(CH3)2]3 and H2O. Both dielectrics were grown in two-temperature ALD processes starting deposition of Al2O3 at 25 °C and ZrO2 at 200 °C, thereafter completing both processes at a substrate temperature of 300 °C. Deposition of ZrO2 changed the structure of C-nanoparticles, which still remained in a Si/Al2O3/C/ZrO2 structure as a separate layer. Electrical characterization of nanostructures containing Al2O3 as tunnel oxide, C-nanoparticles as charge traps and ZrO2 as control oxide showed hysteretic flat-band voltage shift of about 1V.