Enhancement of light emission in GaAs epilayers with graphene quantum dots

A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml −1 . On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them. The effect of graphene quantum dots (GQDs) on the enhancement of PL in GaAs epilayers has been demonstrated and interpreted by carrier transfer due to the work function difference.