Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

By modification of the electrode–solid‐electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2O5/Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta‐cation...

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Veröffentlicht in:	Advanced materials (Weinheim) 2015-10, Vol.27 (40), p.6202-6207
Hauptverfasser:	Lübben, Michael, Karakolis, Panagiotis, Ioannou-Sougleridis, Vassilios, Normand, Pascal, Dimitrakis, Panagiotis, Valov, Ilia
Format:	Artikel
Sprache:	eng
Schlagworte:	electrochemical metallization memories graphene interfaces redox-based resistive switching memories (ReRAM) valence change memories
Online-Zugang:	Volltext
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