Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

By modification of the electrode–solid‐electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2O5/Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta‐cation mobility in TaOx. The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.