Three-Dimensional Electro-Thermal Verilog-A Model of Power MOSFET for Circuit Simulation

New original circuit model for the power device based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a three-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit simulations with distributed properties an...

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Veröffentlicht in:Journal of physics. Conference series 2014-01, Vol.494 (1), p.12006-5
Hauptverfasser: Chvála, A, Donoval, D, Marek, J, Príbytný, P, Molnár, M, Mikolášek, M
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Sprache:eng
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Zusammenfassung:New original circuit model for the power device based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a three-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit simulations with distributed properties and three-dimensional thermal equivalent network is used for simulation of multipulse unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/494/1/012006