Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor

In this paper, we are interested in studying InP/InGaAs heterojunction bipolar transistor NPN type. First and for most we should describe the structure of our simulation, then, we ploted at room temperature: Energy band diagram, Gummel plot, IC-VC characteristic and conduction bands for different va...

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Veröffentlicht in:	International journal of electrical and computer engineering (Malacca, Malacca) Malacca), 2015-06, Vol.5 (3), p.525-530
Hauptverfasser:	Yamina, Berrichi, Kherreddine, Ghaffour
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Electronics Energy bands Heterojunction bipolar transistors Indium phosphides Mathematical models Semiconductor devices
Online-Zugang:	Volltext
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