Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor

Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor

In this paper, we are interested in studying InP/InGaAs heterojunction bipolar transistor NPN type. First and for most we should describe the structure of our simulation, then, we ploted at room temperature: Energy band diagram, Gummel plot, IC-VC characteristic and conduction bands for different va...

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Veröffentlicht in:International journal of electrical and computer engineering (Malacca, Malacca) Malacca), 2015-06, Vol.5 (3), p.525-530
Hauptverfasser: Yamina, Berrichi, Kherreddine, Ghaffour
Format: Artikel
Sprache:eng
Schlagworte:
Computer simulation
Electronics
Energy bands
Heterojunction bipolar transistors
Indium phosphides
Mathematical models
Semiconductor devices
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Zusammenfassung:In this paper, we are interested in studying InP/InGaAs heterojunction bipolar transistor NPN type. First and for most we should describe the structure of our simulation, then, we ploted at room temperature: Energy band diagram, Gummel plot, IC-VC characteristic and conduction bands for different values of VBE. The simulation of this structure has demonstrated the validity of our model and the method of the simulation.
ISSN:2088-8708
2088-8708
DOI:10.11591/ijece.v5i3.pp525-530