57.2: Electrical Characterization of BCE-TFTs with a-IGZTO Oxide Semiconductor Compatible with Cu and Al interconnections

57.2: Electrical Characterization of BCE-TFTs with a-IGZTO Oxide Semiconductor Compatible with Cu and Al interconnections

We have developed an amorphous In‐Ga‐Zn‐Sn‐O (a‐IGZTO) semiconducting thin film for back channel etching (BCE) type thin‐film transistors (TFTs). As the material is highly stable to acid etchants, the fabrication of the IGZTO TFTs having both Al and Cu interconnections is viable by back channel etch...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2015-06, Vol.46 (1), p.853-856
Hauptverfasser: Ochi, Mototaka, Morita, Shinya, Takanashi, Yasuyuki, Tao, Hiroaki, Goto, Hiroshi, Kugimiya, Toshihiro, Kanamaru, Moriyoshi
Format: Artikel
Sprache:eng
Schlagworte:
Al interconnection
Aluminum
Back channel etch type TFT
Channels
CONNECTORS (ELECTRICAL)
Cu interconnection
ELECTRONIC PRODUCTS
Etchants
Etching
Interconnections
Oxide semiconductor
OXIDES
Semiconductor devices
SEMICONDUCTORS
Thin film transistors
THIN FILMS
TRANSISTORS
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Beschreibung
Zusammenfassung:We have developed an amorphous In‐Ga‐Zn‐Sn‐O (a‐IGZTO) semiconducting thin film for back channel etching (BCE) type thin‐film transistors (TFTs). As the material is highly stable to acid etchants, the fabrication of the IGZTO TFTs having both Al and Cu interconnections is viable by back channel etching using conventional etchant such as PAN and H2O2‐based etchants.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10359