Hall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations

Hall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations

The Monte Carlo Single Particle approach was used to analyze electron transport in 4H-SiC taking into account the influence of the magnetic field. Within the numerical approach it was possible to evaluate electron Hall mobility and the Hall factor for the wide range of donor concentrations and tempe...

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Veröffentlicht in:Journal of physics. Conference series 2014-01, Vol.494 (1), p.12005-6
Hauptverfasser: Woźny, J, Lisik, Z, Podgórski, J
Format: Artikel
Sprache:eng
Schlagworte:
Carbides
Computer simulation
Electron mobility
Electron transport
Hall effect
Magnetic fields
Monte Carlo methods
Particles (of physics)
Physics
Silicon carbide
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Zusammenfassung:The Monte Carlo Single Particle approach was used to analyze electron transport in 4H-SiC taking into account the influence of the magnetic field. Within the numerical approach it was possible to evaluate electron Hall mobility and the Hall factor for the wide range of donor concentrations and temperatures varying from 300 K up to 700 K.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/494/1/012005