P-41: New a-IGZO TFT Gate Driver Circuit with Threshold Voltage Shift Recovery Driving Scheme

An amorphous indium‐gallium‐zinc oxide thin‐film transistor (a‐IGZO TFT) integrated gate driver with 33% ac driving structure and a new driving scheme for recovering the negative threshold voltage shift (VTH) is presented. The proposed circuit reduces the power consumption by fully turning off drivi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	SID International Symposium Digest of technical papers 2015-06, Vol.46 (1), p.1293-1296
Hauptverfasser:	Lin, Chih-Lung, Wu, Chia-En, Lee, Ching-En
Format:	Artikel
Sprache:	eng
Schlagworte:	Depletion depletion-mode a-IGZO TFT gate driver circuit Gates (circuits) Panels Power consumption Semiconductor devices Stresses Thin film transistors Threshold voltage threshold voltage shift
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	1296
container_issue	1
container_start_page	1293
container_title	SID International Symposium Digest of technical papers
container_volume	46
creator	Lin, Chih-Lung Wu, Chia-En Lee, Ching-En
description	An amorphous indium‐gallium‐zinc oxide thin‐film transistor (a‐IGZO TFT) integrated gate driver with 33% ac driving structure and a new driving scheme for recovering the negative threshold voltage shift (VTH) is presented. The proposed circuit reduces the power consumption by fully turning off driving TFTs and lowers the gate‐bias stress to prevent severe degradations of TFTs. Furthermore, the negative VTH shift of driving TFT is diminished by applying positive gate‐bias stress. Simulation results illustrate that the proposed gate driver can be successfully operated with depletion‐mode a‐IGZO TFTs and the power consumption is estimated as 274.56 µW under the specification of 5.46‐inch FHD panel.
doi_str_mv	10.1002/sdtp.10099
format	Article
fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1718946168</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1718946168</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2179-b0efbce3fac9f312982cdb13faf69ccb456e73adfbb9c3910eef33dcb3bc5d213</originalsourceid><addsrcrecordid>eNp9kFtLwzAUx4MoOC8vfoKALyJUk6ZNG99kc1PwhqsXBAlpemKj3TqTzrlvb-fUBx98Ohd-_8Phh9AOJQeUkPDQF81k0Qmxgjoh5WlAaCxWUaddJYHg_GEdbXj_QghjUSQ66Ok6iOgRvoQZVsHZ4PEKZ_0MD1QDuOfsOzjctU5PbYNntilxVjrwZV0V-K6uGvUMeFha0-Ab0HULz79CdvyMh7qEEWyhNaMqD9vfdRPd9k-y7mlwfjU46x6fBzqkiQhyAibXwIzSwjAaijTURU7b2XChdR7FHBKmCpPnQjNBCYBhrNA5y3VchJRtor3l3Ymr36bgGzmyXkNVqTHUUy9pQlMR8dZHi-7-QV_qqRu330nKhYhjnhLRUvtLSrvaewdGTpwdKTeXlMiFabkwLb9MtzBdwjNbwfwfUg572fVPJlhmrG_g4zej3KvkCUtieX85kDS-SXv8nsgL9gmNGY8p</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1699556809</pqid></control><display><type>article</type><title>P-41: New a-IGZO TFT Gate Driver Circuit with Threshold Voltage Shift Recovery Driving Scheme</title><source>Wiley Online Library All Journals</source><creator>Lin, Chih-Lung ; Wu, Chia-En ; Lee, Ching-En</creator><creatorcontrib>Lin, Chih-Lung ; Wu, Chia-En ; Lee, Ching-En</creatorcontrib><description>An amorphous indium‐gallium‐zinc oxide thin‐film transistor (a‐IGZO TFT) integrated gate driver with 33% ac driving structure and a new driving scheme for recovering the negative threshold voltage shift (VTH) is presented. The proposed circuit reduces the power consumption by fully turning off driving TFTs and lowers the gate‐bias stress to prevent severe degradations of TFTs. Furthermore, the negative VTH shift of driving TFT is diminished by applying positive gate‐bias stress. Simulation results illustrate that the proposed gate driver can be successfully operated with depletion‐mode a‐IGZO TFTs and the power consumption is estimated as 274.56 µW under the specification of 5.46‐inch FHD panel.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.10099</identifier><language>eng</language><publisher>Campbell: Blackwell Publishing Ltd</publisher><subject>Depletion ; depletion-mode a-IGZO TFT ; gate driver circuit ; Gates (circuits) ; Panels ; Power consumption ; Semiconductor devices ; Stresses ; Thin film transistors ; Threshold voltage ; threshold voltage shift</subject><ispartof>SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.1293-1296</ispartof><rights>2015 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2179-b0efbce3fac9f312982cdb13faf69ccb456e73adfbb9c3910eef33dcb3bc5d213</citedby><cites>FETCH-LOGICAL-c2179-b0efbce3fac9f312982cdb13faf69ccb456e73adfbb9c3910eef33dcb3bc5d213</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsdtp.10099$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsdtp.10099$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1416,27923,27924,45573,45574</link.rule.ids></links><search><creatorcontrib>Lin, Chih-Lung</creatorcontrib><creatorcontrib>Wu, Chia-En</creatorcontrib><creatorcontrib>Lee, Ching-En</creatorcontrib><title>P-41: New a-IGZO TFT Gate Driver Circuit with Threshold Voltage Shift Recovery Driving Scheme</title><title>SID International Symposium Digest of technical papers</title><description>An amorphous indium‐gallium‐zinc oxide thin‐film transistor (a‐IGZO TFT) integrated gate driver with 33% ac driving structure and a new driving scheme for recovering the negative threshold voltage shift (VTH) is presented. The proposed circuit reduces the power consumption by fully turning off driving TFTs and lowers the gate‐bias stress to prevent severe degradations of TFTs. Furthermore, the negative VTH shift of driving TFT is diminished by applying positive gate‐bias stress. Simulation results illustrate that the proposed gate driver can be successfully operated with depletion‐mode a‐IGZO TFTs and the power consumption is estimated as 274.56 µW under the specification of 5.46‐inch FHD panel.</description><subject>Depletion</subject><subject>depletion-mode a-IGZO TFT</subject><subject>gate driver circuit</subject><subject>Gates (circuits)</subject><subject>Panels</subject><subject>Power consumption</subject><subject>Semiconductor devices</subject><subject>Stresses</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>threshold voltage shift</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kFtLwzAUx4MoOC8vfoKALyJUk6ZNG99kc1PwhqsXBAlpemKj3TqTzrlvb-fUBx98Ohd-_8Phh9AOJQeUkPDQF81k0Qmxgjoh5WlAaCxWUaddJYHg_GEdbXj_QghjUSQ66Ok6iOgRvoQZVsHZ4PEKZ_0MD1QDuOfsOzjctU5PbYNntilxVjrwZV0V-K6uGvUMeFha0-Ab0HULz79CdvyMh7qEEWyhNaMqD9vfdRPd9k-y7mlwfjU46x6fBzqkiQhyAibXwIzSwjAaijTURU7b2XChdR7FHBKmCpPnQjNBCYBhrNA5y3VchJRtor3l3Ymr36bgGzmyXkNVqTHUUy9pQlMR8dZHi-7-QV_qqRu330nKhYhjnhLRUvtLSrvaewdGTpwdKTeXlMiFabkwLb9MtzBdwjNbwfwfUg572fVPJlhmrG_g4zej3KvkCUtieX85kDS-SXv8nsgL9gmNGY8p</recordid><startdate>201506</startdate><enddate>201506</enddate><creator>Lin, Chih-Lung</creator><creator>Wu, Chia-En</creator><creator>Lee, Ching-En</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>201506</creationdate><title>P-41: New a-IGZO TFT Gate Driver Circuit with Threshold Voltage Shift Recovery Driving Scheme</title><author>Lin, Chih-Lung ; Wu, Chia-En ; Lee, Ching-En</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2179-b0efbce3fac9f312982cdb13faf69ccb456e73adfbb9c3910eef33dcb3bc5d213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Depletion</topic><topic>depletion-mode a-IGZO TFT</topic><topic>gate driver circuit</topic><topic>Gates (circuits)</topic><topic>Panels</topic><topic>Power consumption</topic><topic>Semiconductor devices</topic><topic>Stresses</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>threshold voltage shift</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Chih-Lung</creatorcontrib><creatorcontrib>Wu, Chia-En</creatorcontrib><creatorcontrib>Lee, Ching-En</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Chih-Lung</au><au>Wu, Chia-En</au><au>Lee, Ching-En</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P-41: New a-IGZO TFT Gate Driver Circuit with Threshold Voltage Shift Recovery Driving Scheme</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2015-06</date><risdate>2015</risdate><volume>46</volume><issue>1</issue><spage>1293</spage><epage>1296</epage><pages>1293-1296</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>An amorphous indium‐gallium‐zinc oxide thin‐film transistor (a‐IGZO TFT) integrated gate driver with 33% ac driving structure and a new driving scheme for recovering the negative threshold voltage shift (VTH) is presented. The proposed circuit reduces the power consumption by fully turning off driving TFTs and lowers the gate‐bias stress to prevent severe degradations of TFTs. Furthermore, the negative VTH shift of driving TFT is diminished by applying positive gate‐bias stress. Simulation results illustrate that the proposed gate driver can be successfully operated with depletion‐mode a‐IGZO TFTs and the power consumption is estimated as 274.56 µW under the specification of 5.46‐inch FHD panel.</abstract><cop>Campbell</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/sdtp.10099</doi><tpages>4</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0097-966X
ispartof	SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.1293-1296
issn	0097-966X 2168-0159
language	eng
recordid	cdi_proquest_miscellaneous_1718946168
source	Wiley Online Library All Journals
subjects	Depletion depletion-mode a-IGZO TFT gate driver circuit Gates (circuits) Panels Power consumption Semiconductor devices Stresses Thin film transistors Threshold voltage threshold voltage shift
title	P-41: New a-IGZO TFT Gate Driver Circuit with Threshold Voltage Shift Recovery Driving Scheme
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T01%3A12%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=P-41:%20New%20a-IGZO%20TFT%20Gate%20Driver%20Circuit%20with%20Threshold%20Voltage%20Shift%20Recovery%20Driving%20Scheme&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Lin,%20Chih-Lung&rft.date=2015-06&rft.volume=46&rft.issue=1&rft.spage=1293&rft.epage=1296&rft.pages=1293-1296&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.10099&rft_dat=%3Cproquest_cross%3E1718946168%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1699556809&rft_id=info:pmid/&rfr_iscdi=true