P-41: New a-IGZO TFT Gate Driver Circuit with Threshold Voltage Shift Recovery Driving Scheme

An amorphous indium‐gallium‐zinc oxide thin‐film transistor (a‐IGZO TFT) integrated gate driver with 33% ac driving structure and a new driving scheme for recovering the negative threshold voltage shift (VTH) is presented. The proposed circuit reduces the power consumption by fully turning off driving TFTs and lowers the gate‐bias stress to prevent severe degradations of TFTs. Furthermore, the negative VTH shift of driving TFT is diminished by applying positive gate‐bias stress. Simulation results illustrate that the proposed gate driver can be successfully operated with depletion‐mode a‐IGZO TFTs and the power consumption is estimated as 274.56 µW under the specification of 5.46‐inch FHD panel.