Guided Growth of Horizontal ZnSe Nanowires and their Integration into High-Performance Blue-UV Photodetectors

Guided Growth of Horizontal ZnSe Nanowires and their Integration into High-Performance Blue-UV Photodetectors

Perfectly aligned horizontal ZnSe nano­wires are obtained by guided growth, and easily integrated into high‐performance blue–UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the w...

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Veröffentlicht in:Advanced materials (Weinheim) 2015-07, Vol.27 (27), p.3999-4005
Hauptverfasser: Oksenberg, Eitan, Popovitz-Biro, Ronit, Rechav, Katya, Joselevich, Ernesto
Format: Artikel
Sprache:eng
Schlagworte:
bottom-up
Crystal structure
epitaxy
Horizontal
Nanostructure
Nanowires
Optoelectronic devices
optoelectronics
Orientation
Photodetectors
zinc selenide
Zinc selenides
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Beschreibung
Zusammenfassung:Perfectly aligned horizontal ZnSe nano­wires are obtained by guided growth, and easily integrated into high‐performance blue–UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large‐scale integration of nanowires into optoelectronic devices.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201500736