Drying-Mediated Self-Assembled Growth of Transition Metal Dichalcogenide Wires and their Heterostructures

The creation of self‐aligned MoS2 and WS2 wire arrays and their stacked hetero structures with controlled sizes and properties by a novel and facile method is presented. The thicknesses and periodicities of the aligned wires can be precisely controlled by adjusting certain parameters. These transition metal dichalcogenide wires are used as 1D semiconducting materials in the construction of flexible and transparent electronic devices. In addition, WS2/MoS2 heterostructures display clear optical and structural modulation.