Dilatation deformation potential, drift mobility and piezoresistance in p-type silicon (quantum kinetic approach)

Analytic expressions for low field mobility and conductivity (resistance) in unstrained and high strained states for p-type silicon bulk crystals and nanostructures have been obtained on base of quantum kinetic equation and special form of the non-equilibrium distribution function. Ionized impurities, acoustic and optic phonons are adopted as scattering system. Calculated temperature dependences of mobility and strain dependences of resistance are compared with known experimental data. Numerical value of the dilatation deformation potential has been found. Proposed model of origin of the anomalous piezoresistance effect in p-type silicon nanostructures at high tensile strains provides not only qualitative but even sufficient quantitative agreement with experimental data.