Calculation of the spatial distribution of defects and cascade- probability functions in the materials

In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and anal...

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Veröffentlicht in:	Journal of physics. Conference series 2014-01, Vol.552 (1), p.12047-7
Hauptverfasser:	Kupchishin, A I, Kupchishin, A A, Shmygalev, E V, Shmygaleva, T A, Tlebaev, K B
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Energy distribution Indium Mathematical analysis Mathematical models Penetration Physics Silicon Spatial distribution
Online-Zugang:	Volltext
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