Calculation of the spatial distribution of defects and cascade- probability functions in the materials

Calculation of the spatial distribution of defects and cascade- probability functions in the materials

In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and anal...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physics. Conference series 2014-01, Vol.552 (1), p.12047-7
Hauptverfasser: Kupchishin, A I, Kupchishin, A A, Shmygalev, E V, Shmygaleva, T A, Tlebaev, K B
Format: Artikel
Sprache:eng
Schlagworte:
Computer simulation
Energy distribution
Indium
Mathematical analysis
Mathematical models
Penetration
Physics
Silicon
Spatial distribution
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and analysis of the characteristics of ions depending on the depth of penetration and the number of interactions were carried out.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/552/1/012047