THz photoluminescence from n-GaN layers at CW interband excitation

THz photoluminescence from n-GaN layers at CW interband excitation

We report on experimental observation and studies of terahertz emission from n-doped GaN films under continuous wave interband photoexcitation at low temperatures. Properties of the terahertz emission testify that the emission is caused by intracenter optical transitions in shallow donors of GaN. Th...

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Veröffentlicht in:Journal of physics. Conference series 2014-01, Vol.486 (1), p.12033-2
Hauptverfasser: Andrianov, Alexander V, Zakhar'in, Alexey O, Bobylev, Alexander V, Feng, Zhe C
Format: Artikel
Sprache:eng
Schlagworte:
Continuous radiation
Continuous wave
Emission analysis
Excitation
Gallium nitrides
Low temperature
Optical transition
Photoexcitation
Photoluminescence
Physics
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Beschreibung
Zusammenfassung:We report on experimental observation and studies of terahertz emission from n-doped GaN films under continuous wave interband photoexcitation at low temperatures. Properties of the terahertz emission testify that the emission is caused by intracenter optical transitions in shallow donors of GaN. The THz intracenter optical transitions are initiated by the interband photoexcitation.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/486/1/012033