Terahertz detector with series connection of asymmetric gated transistors

Terahertz detector with series connection of asymmetric gated transistors

Terahertz (THz) detection by a one-dimensional array of series connected field-effect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced voltaic responsivity up to 2 kV/W. Asymmetrical position of the gate contact in each FET in the array enables stro...

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Veröffentlicht in:Journal of physics. Conference series 2014-01, Vol.486 (1), p.12016-2
Hauptverfasser: Yermolaev, D M, Marem'yanin, K M, Maleev, N A, Zemlyakov, V E, Gavrilenko, V I, Popov, V V, Shapoval, S Yu
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
Asymmetry
Contact
Detectors
Field effect transistors
Gates
Physics
Semiconductor devices
Solar cells
Transistors
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Zusammenfassung:Terahertz (THz) detection by a one-dimensional array of series connected field-effect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced voltaic responsivity up to 2 kV/W. Asymmetrical position of the gate contact in each FET in the array enables strong photovoltaic response.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/486/1/012016