Screened Coulomb bound states in a finite confining potential semiconductor quantum well
The model to investigate the screened Coulomb interaction in realistic EuS/PbS/EuS finite confining potential quantum well is theoretically developed. A strong contrast of existing material parameters across the well interfaces and typical band-nonparabolicity effect of lead salt semiconductor are t...
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| Veröffentlicht in: | Journal of physics. Conference series 2012-01, Vol.350 (1), p.12015-8 |
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| container_title | Journal of physics. Conference series |
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| creator | Aharonyan, K H |
| description | The model to investigate the screened Coulomb interaction in realistic EuS/PbS/EuS finite confining potential quantum well is theoretically developed. A strong contrast of existing material parameters across the well interfaces and typical band-nonparabolicity effect of lead salt semiconductor are taken into account while a variational approach has been used. In presence of inhomogeneous dielectric polarization a quasi two-dimensional screened Coulomb form factor analysis is carried out by using random phase approximation. Initial deviations from the inhomogeneous polarization absent case are established and in particular quantum well width dependent screened logarithmical-type interaction potential is obtained. A screened binding energy has been investigated and an explicit logarithmical-type expression is used for the first time. Depending on the realistic nanostructure specifics a monotonic decrease of the enhanced binding energy is received when in-plane carrier density /temperature ratio parameter increases. |
| doi_str_mv | 10.1088/1742-6596/350/1/012015 |
| format | Article |
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A strong contrast of existing material parameters across the well interfaces and typical band-nonparabolicity effect of lead salt semiconductor are taken into account while a variational approach has been used. In presence of inhomogeneous dielectric polarization a quasi two-dimensional screened Coulomb form factor analysis is carried out by using random phase approximation. Initial deviations from the inhomogeneous polarization absent case are established and in particular quantum well width dependent screened logarithmical-type interaction potential is obtained. A screened binding energy has been investigated and an explicit logarithmical-type expression is used for the first time. Depending on the realistic nanostructure specifics a monotonic decrease of the enhanced binding energy is received when in-plane carrier density /temperature ratio parameter increases.</description><identifier>ISSN: 1742-6596</identifier><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/350/1/012015</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Approximation ; Binding energy ; Carrier density ; Confining ; Coulomb friction ; Dielectric polarization ; Factor analysis ; Form factors ; Mathematical analysis ; Mathematical models ; Parameters ; Physics ; Quantum wells ; Semiconductors ; Temperature ratio ; Two dimensional analysis</subject><ispartof>Journal of physics. 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Depending on the realistic nanostructure specifics a monotonic decrease of the enhanced binding energy is received when in-plane carrier density /temperature ratio parameter increases.</description><subject>Approximation</subject><subject>Binding energy</subject><subject>Carrier density</subject><subject>Confining</subject><subject>Coulomb friction</subject><subject>Dielectric polarization</subject><subject>Factor analysis</subject><subject>Form factors</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Parameters</subject><subject>Physics</subject><subject>Quantum wells</subject><subject>Semiconductors</subject><subject>Temperature ratio</subject><subject>Two dimensional analysis</subject><issn>1742-6596</issn><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdkE1LxDAQhoMouK7-BQl48VI3H03SHGXxCxY8qOAtJGkqXdpkNx-I_96WFRHnMsPMw_DyAHCJ0Q1GTbPCoiYVZ5KvKEMrvEKYIMyOwOL3cPxnPgVnKW0RolOJBXh_sdE571q4DmUIo4EmFN_ClHV2CfYeatj1vs8O2uDnyX_AXcjO514PMLmxn_ZtsTlEuC_a5zLCTzcM5-Ck00NyFz99Cd7u717Xj9Xm-eFpfbupLOV1rngrmKFEa0klZRppqYnsJEY1wdrV3NQNQ0K6ppVaWGo7oxERRkuOa8NbQ5fg-vB3F8O-uJTV2Cc7BdDehZIUFriRpKYNndCrf-g2lOindIow0SCGOeYTxQ-UjSGl6Dq1i_2o45fCSM3C1exSzS7VJFxhdRBOvwEVJ3PF</recordid><startdate>20120101</startdate><enddate>20120101</enddate><creator>Aharonyan, K H</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20120101</creationdate><title>Screened Coulomb bound states in a finite confining potential semiconductor quantum well</title><author>Aharonyan, K H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-6d75b32aa93935a0a9a29f910421ae46b485079e8d9a7c3cfba027ba9614b6db3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Approximation</topic><topic>Binding energy</topic><topic>Carrier density</topic><topic>Confining</topic><topic>Coulomb friction</topic><topic>Dielectric polarization</topic><topic>Factor analysis</topic><topic>Form factors</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Parameters</topic><topic>Physics</topic><topic>Quantum wells</topic><topic>Semiconductors</topic><topic>Temperature ratio</topic><topic>Two dimensional analysis</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aharonyan, K H</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Journal of physics. 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In presence of inhomogeneous dielectric polarization a quasi two-dimensional screened Coulomb form factor analysis is carried out by using random phase approximation. Initial deviations from the inhomogeneous polarization absent case are established and in particular quantum well width dependent screened logarithmical-type interaction potential is obtained. A screened binding energy has been investigated and an explicit logarithmical-type expression is used for the first time. Depending on the realistic nanostructure specifics a monotonic decrease of the enhanced binding energy is received when in-plane carrier density /temperature ratio parameter increases.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/350/1/012015</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Approximation Binding energy Carrier density Confining Coulomb friction Dielectric polarization Factor analysis Form factors Mathematical analysis Mathematical models Parameters Physics Quantum wells Semiconductors Temperature ratio Two dimensional analysis |
| title | Screened Coulomb bound states in a finite confining potential semiconductor quantum well |
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