Screened Coulomb bound states in a finite confining potential semiconductor quantum well

The model to investigate the screened Coulomb interaction in realistic EuS/PbS/EuS finite confining potential quantum well is theoretically developed. A strong contrast of existing material parameters across the well interfaces and typical band-nonparabolicity effect of lead salt semiconductor are taken into account while a variational approach has been used. In presence of inhomogeneous dielectric polarization a quasi two-dimensional screened Coulomb form factor analysis is carried out by using random phase approximation. Initial deviations from the inhomogeneous polarization absent case are established and in particular quantum well width dependent screened logarithmical-type interaction potential is obtained. A screened binding energy has been investigated and an explicit logarithmical-type expression is used for the first time. Depending on the realistic nanostructure specifics a monotonic decrease of the enhanced binding energy is received when in-plane carrier density /temperature ratio parameter increases.