High Sensitivity InAs DQW Linear Hybrid Hall ICs with InAs Deep Quantum Well Hall Elements

SUMMARY By electrically connecting and placing an InAs deep quantum well (DQW) Hall element as a magnetic sensor chip and an Si IC linear amplifier in a small plastic package, a very small InAs DQW linear hybrid Hall IC (InAs DQW LHHIC) with a high magnetic field sensitivity has been developed. The...

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Veröffentlicht in:Electronics and communications in Japan 2015-08, Vol.98 (8), p.1-8
Hauptverfasser: SHIBASAKI, ICHIRO, KURIYAMA, KENJI, MAKINO, TAKASHI, HUKASAWA, NAOYA, SUZUKI, KENJI
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Sprache:eng
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Zusammenfassung:SUMMARY By electrically connecting and placing an InAs deep quantum well (DQW) Hall element as a magnetic sensor chip and an Si IC linear amplifier in a small plastic package, a very small InAs DQW linear hybrid Hall IC (InAs DQW LHHIC) with a high magnetic field sensitivity has been developed. The output voltage of the hybrid Hall IC showed a very small temperature coefficient of 0.02%/°C and the response time was very low, less than 3 μs. By using this InAs DQW LHHIC, practical current sensors with high sensitivity, high accuracy, and temperature stability have been developed.
ISSN:1942-9533
1942-9541
DOI:10.1002/ecj.11698