High Sensitivity InAs DQW Linear Hybrid Hall ICs with InAs Deep Quantum Well Hall Elements
SUMMARY By electrically connecting and placing an InAs deep quantum well (DQW) Hall element as a magnetic sensor chip and an Si IC linear amplifier in a small plastic package, a very small InAs DQW linear hybrid Hall IC (InAs DQW LHHIC) with a high magnetic field sensitivity has been developed. The...
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Veröffentlicht in: | Electronics and communications in Japan 2015-08, Vol.98 (8), p.1-8 |
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Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | SUMMARY
By electrically connecting and placing an InAs deep quantum well (DQW) Hall element as a magnetic sensor chip and an Si IC linear amplifier in a small plastic package, a very small InAs DQW linear hybrid Hall IC (InAs DQW LHHIC) with a high magnetic field sensitivity has been developed. The output voltage of the hybrid Hall IC showed a very small temperature coefficient of 0.02%/°C and the response time was very low, less than 3 μs. By using this InAs DQW LHHIC, practical current sensors with high sensitivity, high accuracy, and temperature stability have been developed. |
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ISSN: | 1942-9533 1942-9541 |
DOI: | 10.1002/ecj.11698 |