Porosity dependence of positive magnetoconductance in n-type porous silicon

Positive magnetoconductance (MC) on n‐type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi‐1D weak locali...

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Veröffentlicht in:	Physica status solidi. C 2012-10, Vol.9 (10-11), p.1896-1899
Hauptverfasser:	Chouaibi, Bassem, Radaoui, Moufid, Benfredj, Amel, Romdhane, Samir, Bouaïcha, Mongi, Bouchriha, Habib
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices electronic quantum transport Localization Magnetic fields nanowire silicon Phase coherence Porosity Porous silicon Position (location) positive magnetoconductance Solid state physics
Online-Zugang:	Volltext
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