Porosity dependence of positive magnetoconductance in n-type porous silicon

Porosity dependence of positive magnetoconductance in n-type porous silicon

Positive magnetoconductance (MC) on n‐type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi‐1D weak locali...

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Veröffentlicht in:Physica status solidi. C 2012-10, Vol.9 (10-11), p.1896-1899
Hauptverfasser: Chouaibi, Bassem, Radaoui, Moufid, Benfredj, Amel, Romdhane, Samir, Bouaïcha, Mongi, Bouchriha, Habib
Format: Artikel
Sprache:eng
Schlagworte:
Devices
electronic quantum transport
Localization
Magnetic fields
nanowire silicon
Phase coherence
Porosity
Porous silicon
Position (location)
positive magnetoconductance
Solid state physics
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Zusammenfassung:Positive magnetoconductance (MC) on n‐type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi‐1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length Lϕ. Good agreement between theoretical and experimental results was found (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201200346