Porosity dependence of positive magnetoconductance in n-type porous silicon

Porosity dependence of positive magnetoconductance in n-type porous silicon

Positive magnetoconductance (MC) on n‐type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi‐1D weak locali...

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Veröffentlicht in:Physica status solidi. C 2012-10, Vol.9 (10-11), p.1896-1899
Hauptverfasser: Chouaibi, Bassem, Radaoui, Moufid, Benfredj, Amel, Romdhane, Samir, Bouaïcha, Mongi, Bouchriha, Habib
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Sprache:eng
Schlagworte:
Devices
electronic quantum transport
Localization
Magnetic fields
nanowire silicon
Phase coherence
Porosity
Porous silicon
Position (location)
positive magnetoconductance
Solid state physics
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container_end_page 1899
container_issue 10-11
container_start_page 1896
container_title Physica status solidi. C
container_volume 9
creator Chouaibi, Bassem
Radaoui, Moufid
Benfredj, Amel
Romdhane, Samir
Bouaïcha, Mongi
Bouchriha, Habib
description Positive magnetoconductance (MC) on n‐type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi‐1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length Lϕ. Good agreement between theoretical and experimental results was found (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.201200346
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1718919709</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1718919709</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3436-f1565abc12402776763aceea808d2a816a3dab3f253b197627539370c7c6fb573</originalsourceid><addsrcrecordid>eNqFkMFLwzAUh4soOKdXzwUvXjrzkiZpjzp1imNOpwi7hCxNJbNra9Oq_e9NqQzx4uk93vu-x-PneceARoAQPiutVSOMACNEQrbjDYABCoCFeNf1EcMBIxT2vQNr1w6hCNjAu5sXVWFN3fqJLnWe6Fxpv0j9shuaD-1v5Guu60IVedKoWnZrk_t5ULeldlRVNNa3JjMOOPT2UplZffRTh97z9dXT-CaY3k9ux-fTQJGQsCAFyqhcKcAhwpwzzohUWssIRQmWETBJErkiKaZkBTFnmFMSE44UVyxdUU6G3ml_t6yK90bbWmyMVTrLZK7dOwI4RLEzUezQkz_oumiq3H0ngGCMUYwicNSop5TLwlY6FWVlNrJqBSDRZSu6bMU2WyfEvfBpMt3-Q4v5YjH-7Qa9a2ytv7aurN4E44RT8TKbiNnlxcNy-YjElHwD30GMfw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1322209081</pqid></control><display><type>article</type><title>Porosity dependence of positive magnetoconductance in n-type porous silicon</title><source>Access via Wiley Online Library</source><creator>Chouaibi, Bassem ; Radaoui, Moufid ; Benfredj, Amel ; Romdhane, Samir ; Bouaïcha, Mongi ; Bouchriha, Habib</creator><creatorcontrib>Chouaibi, Bassem ; Radaoui, Moufid ; Benfredj, Amel ; Romdhane, Samir ; Bouaïcha, Mongi ; Bouchriha, Habib</creatorcontrib><description>Positive magnetoconductance (MC) on n‐type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi‐1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length Lϕ. Good agreement between theoretical and experimental results was found (© 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201200346</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Devices ; electronic quantum transport ; Localization ; Magnetic fields ; nanowire silicon ; Phase coherence ; Porosity ; Porous silicon ; Position (location) ; positive magnetoconductance ; Solid state physics</subject><ispartof>Physica status solidi. C, 2012-10, Vol.9 (10-11), p.1896-1899</ispartof><rights>Copyright © 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><rights>Copyright © 2012 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.201200346$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.201200346$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Chouaibi, Bassem</creatorcontrib><creatorcontrib>Radaoui, Moufid</creatorcontrib><creatorcontrib>Benfredj, Amel</creatorcontrib><creatorcontrib>Romdhane, Samir</creatorcontrib><creatorcontrib>Bouaïcha, Mongi</creatorcontrib><creatorcontrib>Bouchriha, Habib</creatorcontrib><title>Porosity dependence of positive magnetoconductance in n-type porous silicon</title><title>Physica status solidi. C</title><addtitle>Phys. Status Solidi C</addtitle><description>Positive magnetoconductance (MC) on n‐type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi‐1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length Lϕ. Good agreement between theoretical and experimental results was found (© 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><subject>Devices</subject><subject>electronic quantum transport</subject><subject>Localization</subject><subject>Magnetic fields</subject><subject>nanowire silicon</subject><subject>Phase coherence</subject><subject>Porosity</subject><subject>Porous silicon</subject><subject>Position (location)</subject><subject>positive magnetoconductance</subject><subject>Solid state physics</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkMFLwzAUh4soOKdXzwUvXjrzkiZpjzp1imNOpwi7hCxNJbNra9Oq_e9NqQzx4uk93vu-x-PneceARoAQPiutVSOMACNEQrbjDYABCoCFeNf1EcMBIxT2vQNr1w6hCNjAu5sXVWFN3fqJLnWe6Fxpv0j9shuaD-1v5Guu60IVedKoWnZrk_t5ULeldlRVNNa3JjMOOPT2UplZffRTh97z9dXT-CaY3k9ux-fTQJGQsCAFyqhcKcAhwpwzzohUWssIRQmWETBJErkiKaZkBTFnmFMSE44UVyxdUU6G3ml_t6yK90bbWmyMVTrLZK7dOwI4RLEzUezQkz_oumiq3H0ngGCMUYwicNSop5TLwlY6FWVlNrJqBSDRZSu6bMU2WyfEvfBpMt3-Q4v5YjH-7Qa9a2ytv7aurN4E44RT8TKbiNnlxcNy-YjElHwD30GMfw</recordid><startdate>201210</startdate><enddate>201210</enddate><creator>Chouaibi, Bassem</creator><creator>Radaoui, Moufid</creator><creator>Benfredj, Amel</creator><creator>Romdhane, Samir</creator><creator>Bouaïcha, Mongi</creator><creator>Bouchriha, Habib</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201210</creationdate><title>Porosity dependence of positive magnetoconductance in n-type porous silicon</title><author>Chouaibi, Bassem ; Radaoui, Moufid ; Benfredj, Amel ; Romdhane, Samir ; Bouaïcha, Mongi ; Bouchriha, Habib</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3436-f1565abc12402776763aceea808d2a816a3dab3f253b197627539370c7c6fb573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Devices</topic><topic>electronic quantum transport</topic><topic>Localization</topic><topic>Magnetic fields</topic><topic>nanowire silicon</topic><topic>Phase coherence</topic><topic>Porosity</topic><topic>Porous silicon</topic><topic>Position (location)</topic><topic>positive magnetoconductance</topic><topic>Solid state physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chouaibi, Bassem</creatorcontrib><creatorcontrib>Radaoui, Moufid</creatorcontrib><creatorcontrib>Benfredj, Amel</creatorcontrib><creatorcontrib>Romdhane, Samir</creatorcontrib><creatorcontrib>Bouaïcha, Mongi</creatorcontrib><creatorcontrib>Bouchriha, Habib</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chouaibi, Bassem</au><au>Radaoui, Moufid</au><au>Benfredj, Amel</au><au>Romdhane, Samir</au><au>Bouaïcha, Mongi</au><au>Bouchriha, Habib</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Porosity dependence of positive magnetoconductance in n-type porous silicon</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi C</addtitle><date>2012-10</date><risdate>2012</risdate><volume>9</volume><issue>10-11</issue><spage>1896</spage><epage>1899</epage><pages>1896-1899</pages><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>Positive magnetoconductance (MC) on n‐type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi‐1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length Lϕ. Good agreement between theoretical and experimental results was found (© 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.201200346</doi><tpages>4</tpages></addata></record>
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subjects Devices
electronic quantum transport
Localization
Magnetic fields
nanowire silicon
Phase coherence
Porosity
Porous silicon
Position (location)
positive magnetoconductance
Solid state physics
title Porosity dependence of positive magnetoconductance in n-type porous silicon
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T19%3A49%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Porosity%20dependence%20of%20positive%20magnetoconductance%20in%20n-type%20porous%20silicon&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Chouaibi,%20Bassem&rft.date=2012-10&rft.volume=9&rft.issue=10-11&rft.spage=1896&rft.epage=1899&rft.pages=1896-1899&rft.issn=1862-6351&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.201200346&rft_dat=%3Cproquest_cross%3E1718919709%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1322209081&rft_id=info:pmid/&rfr_iscdi=true