Electron delocalization in gate-tunable gapless silicene

The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since intervalley scattering from nonma...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-09, Vol.88 (12), Article 125431
Hauptverfasser: Zhang, Yan-Yang, Tsai, Wei-Feng, Chang, Kai, An, X.-T., Zhang, G.-P., Xie, X.-C., Li, Shu-Shen
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Sprache:eng
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Zusammenfassung:The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since intervalley scattering from nonmagnetic impurities is highly suppressed by time-reversal symmetry, the physics should be effectively single-Dirac-cone like. Through numerical calculations, we demonstrate that there is no significant backscattering from a single impurity that is nonmagnetic and unit-cell uniform, indicating a stable delocalized state. This conjecture is then further confirmed from a scaling of conductance for disordered systems using the same type of impurities.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.88.125431