Photon correlation studies of charge variation in a single GaAlAs quantum dot

Complex charge variation processes in low-density, direct-type GaAlAs quantum dots embedded in a type-II GaAs/AlAs bilayer are studied by single-photon correlation measurements. Two groups of excitonic transitions are distinguished in the single quantum dot (QD) photoluminescence spectra, namely due...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2013-01, Vol.87 (3), Article 035310
Hauptverfasser: Piętka, B., Suffczyński, J., Goryca, M., Kazimierczuk, T., Golnik, A., Kossacki, P., Wysmolek, A., Gaj, J. A., Stępniewski, R., Potemski, M.
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Sprache:eng
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Zusammenfassung:Complex charge variation processes in low-density, direct-type GaAlAs quantum dots embedded in a type-II GaAs/AlAs bilayer are studied by single-photon correlation measurements. Two groups of excitonic transitions are distinguished in the single quantum dot (QD) photoluminescence spectra, namely due to recombination of neutral and charged multiexcitonic complexes. The radiative cascades are found within each group. Three characteristic time scales are identified in the QD emission dynamics. The fastest one (of the order of 1 ns) is related to excitonic radiative recombination. The two remaining ones are related to the QD charge state variation. The one of 100-ns range (typical blinking time scale) corresponds to random capture of single carriers under a quasiresonant excitation. The slowest processes, in the range of seconds, are related to charge fluctuations in the surrounding of the dot.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.87.035310