Raman scattering efficiency of graphene

We determine the Raman scattering efficiency of the G and 2D peaks in graphene. Three substrates are used: silicon covered with 300 or 90 nm oxide, and calcium fluoride (CaF sub(2)). On Si/SiO sub(x), the areas of the G and 2D peak show a strong dependence on the substrate due to interference effects, while on CaF sub(2) no significant dependence is detected. Unintentional doping is reduced by placing graphene on CaF sub(2). We determine the Raman scattering efficiency by comparison with the 322 cm super(-1) peak area of CaF sub(2). At 2.41 eV, the Raman efficiency of the G peak is ~ 200 x 10 super(-5) m super(-1)Sr super(-1), and changes with the excitation energy to the power of 4. The 2D Raman efficiency is at least one order of magnitude higher than that of the G peak, with a different excitation energy dependence.