Use of simple thermal annealing processes to prepare free-standing platinum rods

Large-area free-standing Pt rods have been prepared successfully by simply annealing in air platinum films deposited on a sapphire substrate. This paper describes the first examples of the growth of these Pt rods. The Pt rod density is about 2 × 10 6 cm −2 and the longest Pt rod grown at an angle on...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:CrystEngComm 2010-01, Vol.12 (1), p.2896-292
Hauptverfasser: Ma, Dai Liang, Chen, Hsuen Li
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Large-area free-standing Pt rods have been prepared successfully by simply annealing in air platinum films deposited on a sapphire substrate. This paper describes the first examples of the growth of these Pt rods. The Pt rod density is about 2 × 10 6 cm −2 and the longest Pt rod grown at an angle on sapphire was over a hundred micrometres long. From the ample results of SEM images coupled with the kinetics data, coarsened Pt particles obey the classical ripening process for the first short annealing time, but then followed a vapour-solid growth mode, leading to the formation of Pt rods during the later stages of annealing. Electrical measurements indicate that Pt rods had a resistivity of 10 μΩ cm as well as that of bulk platinum. The electron field emission of Pt rods can be turned on at 5 V μm −1 , achieving a maximum current density of 4 mA cm −2 at an applied field of 33 V μm −1 . As far as we know, this is the first investigation of the electron field emission properties of Pt rods. Through use of simple thermal annealing processes to prepare free-standing Pt rods, it is promising for future nanoscale device fabrication. Coarsened Pt particles obeyed the classical ripening process, (A → B) and then followed a vapour-solid growth mode, leading to the formation of free-standing Pt rods (C → D).
ISSN:1466-8033
1466-8033
DOI:10.1039/b920984k