Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire

A low‐dimensional‐structure vacuum‐ultraviolet‐sensitive photodetector based on high‐quality aluminum nitride (AlN) micro‐/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum‐ultraviolet (VUV) photon detection and opens a way for developing diminutive, power‐saving, and low‐cost VUV materials and sensors that can be potentially applied in geospace sciences and solar‐terrestrial physics.