Inhomogeneous Electronic Distribution in High-T sub( c) Cuprates
We theoretically investigate the doping evolution of the electronic state of high-T... cuprate on both sides of the half-filling on the basis of the three-dimensional three-band Hubbard model with a layered structure using the Hartree-Fock approximation. Once a small amount of holes or electrons are...
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Veröffentlicht in: | Journal of the Physical Society of Japan 2015-05, Vol.84 (5), p.1-1 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We theoretically investigate the doping evolution of the electronic state of high-T... cuprate on both sides of the half-filling on the basis of the three-dimensional three-band Hubbard model with a layered structure using the Hartree-Fock approximation. Once a small amount of holes or electrons are doped into the half-filled state, our model exhibits the charge-transfer insulator-to-metal transition along with a chemical potential jump. At the same time, the doped holes or electrons are inhomogeneously distributed, and they tend to form clusters in the vicinity of the half-filling. This suggests the possibility of microscopic phase separation with the separation between the metallic and the insulating regions. (ProQuest: ... denotes formulae/symbols omitted.) |
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ISSN: | 0031-9015 1347-4073 |