In-situ observation of chemical vapor deposition using SiHCl sub(3) and BCl sub(3) gases

The lowest temperature for initiating the film deposition was evaluated by in situ monitoring using a highly sensitive langasite crystal microbalance (LCM) in order to produce a thin boron doped silicon film using trichlorosilane gas and boron trichloride gas at low temperatures. The thin films of silicon, boron and boron-doped silicon were individually formed from the trichlorosilane gas, boron trichloride gas and their gas mixture, respectively, on the LCM. The silicon film deposition occurred between 570 and 600 degree C, while the boron film deposition occurred between 470 and 530 degree C. The film deposition from both gases occurred at temperatures higher than 530 degree C. Based on secondary ion mass spectrometry measurements, the boron-doped silicon film was determined to be formed on the silicon substrate at 570 degree C. Thus, the LCM could be useful for developing a thin film formation process including that for doping. ([copy 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)