Nonlocal ordinary magnetoresistance in indium arsenide

Deflection of carriers by Lorentz force results in an ordinary magnetoresistance (OMR) of (μB)2 at low field. Here we demonstrate that the OMR in high mobility semiconductor InAs could be enhanced by measurement geometry where two probes of voltmeter were both placed on one outer side of two probes of current source. The nonlocal OMR was 3.6 times as large as the local one, reaching 1.8×104% at 5T. The slope of the linear field dependence of the nonlocal OMR was improved from 12.6T−1 to 45.3T−1. The improvement was ascribed to polarity-conserved charges accumulating on boundaries in nonlocal region due to Hall effect. This InAs device with nonlocal geometry could be competitive in B-sensors due to its high OMR ratio, linear field dependence and simple structure. •Ordinary magnetoresistance could be enhanced by nonlocal geometry by 3.6 times.•Linear field dependence at high field could be realized in nonlocal geometry.•Nonlocal MR was realized by polarity-conserved accumulating charges on boundaries•Nonlocal MR in InAs reached 1.8×104% at 5T.•Nonlocal MR devices could be used in high-field sensing applications.